Display apparatus and manufacturing method thereof

ABSTRACT

A display apparatus including a panel substrate, and a light emitting source disposed on the panel substrate, in which the light emitting source includes a substrate, an electrode disposed on the substrate, a light emitting structure disposed on the electrode and having an n-type semiconductor layer, a p-type semiconductor layer, an n-type electrode, and a p-type electrode, a transparent electrode disposed on the light emitting structure, and an adhesive layer disposed on the light emitting structure, the n-type electrode is electrically connected to the electrode, the p-type electrode is electrically connected to the transparent electrode, and the adhesive layer is disposed between the p-type electrode and the transparent electrode.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. patent application Ser. No.16/915,026, filed on Jun. 29, 2020, which is a Continuation of U.S.patent application Ser. No. 16/285,682, filed on Feb. 26, 2019, nowissued as U.S. Pat. No. 10,833,057, which is a Continuation of U.S.patent application Ser. No. 15/851,718, filed on Dec. 21, 2017, nowissued as U.S. Pat. No. 10,312,225, which is a Continuation of U.S.patent application Ser. No. 15/218,514, filed on Jul. 25, 2016, nowissued as U.S. Pat. No. 9,887,184, which claims priority to and thebenefit of U.S. provisional patent application No. 62/196,282, filed onJul. 23, 2015, and U.S. provisional patent application No. 62/267,770,filed on Dec. 15, 2015, each of which is incorporated by reference forall purposes as if fully set forth herein.

BACKGROUND Field

Exemplary embodiments of the present disclosure relate to a displayapparatus and a method of manufacturing the same, and more particularly,to a display apparatus using micro-light emitting diodes and a method ofmanufacturing the same.

Discussion of the Background

A light emitting diode refers to an inorganic semiconductor deviceconfigured to emit light through recombination of electrons and holes,and has been used in various fields including displays, automobilelamps, general lighting, and the like. Since the light emitting diodehas various advantages such as long lifespan, low power consumption, andrapid response, it is expected that a light emitting device using thelight emitting diode will replace existing light sources.

Recently, smart TVs or monitors have realized colors using a thin filmtransistor liquid crystal display (TFT LCD) panel and tend to use lightemitting diodes (LEDs) as a light source for a backlight unit for colorrealization. In addition, a display apparatus is often manufacturedusing organic light emitting diodes (OLEDs). However, for a TFT-LCD,since one LED is used as a light source for many pixels, a light sourceof a backlight unit is always turned on. Accordingly, the TFT-LCDsuffers from constant power consumption regardless of brightness on adisplayed screen. In order to compensate for this problem, some displayapparatuses are configured to divide a screen into several regions so asto allow control of brightness in these regions. However, since severalto dozens of thousands of pixels are used as a unit for division of thescreen, it is difficult to achieve accurate regulation of brightnesswhile reducing power consumption. On the other hand, although an OLEDhas continuously reduced power consumption through development oftechnology, the OLED still has much higher power consumption than LEDsformed of inorganic semiconductors, and thus has low efficiency.

In addition, a passive matrix (PM) drive type OLED can suffer fromdeterioration in response speed upon pulse amplitude modulation (PAM) ofthe OLED having large capacitance, and can suffer from deterioration inlifespan upon high current driving through pulse width modulation (PWM)for realizing a low duty ratio. Moreover, an active matrix (AM) drivingtype OLED requires connection of TFTs for each pixel, thereby causingincrease in manufacturing costs and non-uniform brightness according tocharacteristics of TFTs.

The above information disclosed in this Background section is only forenhancement of understanding of the background of the inventive concept,and, therefore, it may contain information that does not form the priorart that is already known in this country to a person of ordinary skillin the art.

SUMMARY

Exemplary embodiments provide a display apparatus using micro-lightemitting diodes providing low power consumption to be applicable to awearable apparatus, a smartphone, or a TV, and a method of manufacturingthe same.

Exemplary embodiments provide a display apparatus providing low powerconsumption and enabling accurate regulation of brightness and a methodof manufacturing the same.

Additional aspects will be set forth in the detailed description whichfollows, and, in part, will be apparent from the disclosure, or may belearned by practice of the inventive concept.

An exemplary embodiment discloses a display apparatus including: a firstsubstrate including a light emitting diode part including a plurality oflight emitting diodes regularly arranged on the first substrate; and asecond substrate including a TFT panel unit including a plurality ofTFTs driving the light emitting diodes, wherein the first substrate andthe second substrate are coupled to each other so as to face each othersuch that the light emitting diodes are electrically connected to theTFTs, respectively.

The display apparatus may also include: a support substrate; a pluralityof blue light emitting diodes arranged on an upper surface of thesupport substrate; a plurality of green light emitting diodes arrangedon the upper surface of the support substrate to be placed adjacent theplurality of blue light emitting diodes; and a plurality of red lightemitting diodes arranged on the upper surface of the support substrateto be placed adjacent either the plurality of blue light emitting diodesor the plurality of green light emitting diodes.

Each of the plurality of blue light emitting diodes, the plurality ofgreen light emitting diodes and the plurality of red light emittingdiodes may include an n-type semiconductor layer; a p-type semiconductorlayer; an active layer interposed between the n-type semiconductor layerand the p-type semiconductor layer; an n-type electrode coupled to then-type semiconductor layer; a p-type electrode coupled to the p-typesemiconductor layer; and a wall surrounding the p-type electrode.

The display apparatus may further include a first bonding portionbonding the plurality of blue light emitting diodes to the supportsubstrate; a second bonding portion bonding the plurality of green lightemitting diodes to the support substrate; and a third bonding portionbonding the plurality of red light emitting diodes to the supportsubstrate, and the first to third bonding portions may have differentmelting points.

The display apparatus may further include an anisotropic conductive filmelectrically connecting the light emitting diode part to the TFT panelunit.

The plurality of light emitting diodes may include blue light emittingdiodes emitting blue light, and the display apparatus may furtherinclude a wavelength conversion part including at least one of a bluelight portion emitting the blue light, a green light portion emittinggreen light through conversion of the blue light into the green light,and a red light portion emitting red light through conversion of theblue light into the red light.

The plurality of light emitting diodes may include blue light emittingdiodes emitting blue light and red light emitting diodes emitting redlight, and the display apparatus may further include a wavelengthconversion part including at least one of a blue light portion emittingthe blue light, a green light portion emitting green light throughconversion of the blue light into the green light, and a red lightportion emitting the red light.

The wavelength conversion part may be formed on a third substrate andthe first substrate may be coupled to the third substrate to allowwavelength conversion of light emitted from the plurality of lightemitting diodes. The green light portion and the red light portion mayinclude phosphors. Specifically, the green light portion may includenitride phosphors and the red light portion may include nitride orfluoride phosphors (KSF).

At least one of the first to third substrates may be a transparentsubstrate or an opaque flexible substrate.

The plurality of light emitting diodes may include blue light emittingdiodes emitting blue light, and the display apparatus may furtherinclude a white phosphor portion converting blue light emitted from theblue light emitting diodes into white light; and a color filterincluding a blue light portion allowing blue light of the white lightemitted through the white phosphor portion to pass therethrough, a greenlight portion allowing green light of the white light emitted throughthe white phosphor portion to pass therethrough, and a red light portionallowing red light of the white light emitted through the white phosphorportion to pass therethrough.

Each of the light emitting diodes may include an n-type semiconductorlayer, a p-type semiconductor layer, and an active layer interposedbetween the n-type semiconductor layer and the p-type semiconductorlayer, and a wall may be formed on the p-type semiconductor layer.

An exemplary embodiment further discloses a display apparatus including:a backlight unit including a light emitting diode part and a TFT panelunit driving the light emitting diode part, the light emitting diodepart including a plurality of light emitting diodes regularly arrangedtherein; and a TFT-LCD panel including a plurality of pixels selectivelyallowing light emitted from the backlight unit to pass therethrough soas to emit any one of blue light, green light and red light, whereineach of the light emitting diodes may be disposed to supply light to 1to 1,000 pixels of the TFT-LCD panel.

The display apparatus may further include a first driver generating afirst control signal controlling the backlight unit; and a second drivergenerating a second control signal controlling the TFT-LCD, and thefirst control signal may be interlinked with the second control signal.

The TFT-LCD panel may include a plurality of pixels and the plurality oflight emitting diodes may be arranged corresponding to the plurality ofpixels in the backlight unit, respectively.

The TFT-LCD panel may include a plurality of pixels and the plurality oflight emitting diodes may be arranged to supply light to two to severalhundred pixels among the plurality of pixels in the backlight unit.

The plurality of light emitting diodes may include blue light emittingdiodes, and the display apparatus may further include a white phosphoror a white phosphor film converting blue light emitted from the bluelight emitting diodes into white light.

A ratio (S/A) of luminous area S of the light emitting diodes to area Airradiated with light emitted from the light emitting diodes may be1/1000 or less.

Each of the light emitting diodes may include an n-type semiconductorlayer, a p-type semiconductor layer, and an active layer interposedbetween the n-type semiconductor layer and the p-type semiconductorlayer, and a wall may be formed on the p-type semiconductor layer.

An exemplary embodiment further discloses a method of manufacturing adisplay apparatus including: forming a light emitting diode part suchthat a plurality of light emitting diodes is regularly arranged therein;and coupling the light emitting diode part to a TFT panel unit, whereinforming the light emitting diode part may include forming the pluralityof light emitting diodes on a substrate to be regularly arrangedthereon; transferring the plurality of light emitting diodes to astretchable substrate; two-dimensionally enlarging the stretchablesubstrate such that a separation distance between the light emittingdiodes is enlarged; and coupling at least one of the light emittingdiodes to a support substrate, with the separation distance between thelight emitting diodes enlarged by the stretchable substrate.

The separation distance between the light emitting diodes enlarged bythe stretchable substrate may be twice a width of the light emittingdiodes.

Coupling the light emitting diode part to the TFT panel unit may beperformed using an anisotropic conductive film.

According to exemplary embodiments, the display apparatus may employmicro-light emitting diodes formed of nitride semiconductors and thuscan provide high efficiency and high resolution to be applicable to awearable apparatus while reducing power consumption.

Further, the display apparatus according to the exemplary embodimentsmay employ a stretchable substrate, thereby providing more conveniencein manufacture of the display apparatus than manufacture of the displayapparatus using micro-light emitting diodes.

The foregoing general description and the following detailed descriptionare exemplary and explanatory and are intended to provide furtherexplanation of the claimed subject matter.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the disclosed technology, and are incorporated in andconstitute a part of this specification, illustrate exemplaryembodiments of the disclosed technology, and together with thedescription serve to describe the principles of the disclosedtechnology.

FIG. 1 is a sectional view of a display apparatus according to a firstexemplary embodiment of the present disclosure.

FIG. 2 is a perspective view of a light emitting part of the displayapparatus according to the first exemplary embodiment of the presentdisclosure.

FIGS. 3A, 3B, 3C, 3D, 3E, 3F, 3G, 3H, 3I, 3J, 3K, 3L, 3M, 3N, 3O, and 3Pand

FIGS. 4A, 4B, 4C, 4D, 4E, 4F, and 4G are sectional views and plan viewsillustrating a process of forming the light emitting diode part of thedisplay apparatus according to the first exemplary embodiment of thepresent disclosure.

FIG. 5 is a sectional view of a display apparatus according to a secondexemplary embodiment of the present disclosure.

FIG. 6 is a sectional view of a display apparatus according to a thirdexemplary embodiment of the present disclosure.

FIG. 7 is a sectional view of a display apparatus according to a fourthexemplary embodiment of the present disclosure.

FIG. 8 is a sectional view of a display apparatus according to a fifthexemplary embodiment of the present disclosure.

FIG. 9 is a sectional view of a display apparatus according to a sixthexemplary embodiment of the present disclosure.

FIG. 10A and FIG. 10B are top plan views of the display apparatusaccording to the sixth exemplary embodiment of the present disclosure.

FIG. 11 is a sectional view of a display apparatus according to aseventh exemplary embodiment of the present disclosure.

FIG. 12 is a sectional view of a display apparatus according to a eighthexemplary embodiment of the present disclosure.

FIG. 13 is a sectional view of a display apparatus according to a ninthexemplary embodiment of the present disclosure.

FIG. 14 is a sectional view of a display apparatus according to a tenthexemplary embodiment of the present disclosure.

FIG. 15 is a sectional view of a display apparatus according to aeleventh exemplary embodiment of the present disclosure.

FIGS. 16A, 16B, 16C, and 16D are a sectional view of a display apparatusaccording to a twelfth exemplary embodiment of the present disclosure.

FIGS. 17A, 17B, 17C, 17D, 17E, and 17F show sectional views of a displayapparatus according to a thirteenth exemplary embodiment of the presentdisclosure.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of various exemplary embodiments. It is apparent, however,that various exemplary embodiments may be practiced without thesespecific details or with one or more equivalent arrangements. In otherinstances, well-known structures and devices are shown in block diagramform in order to avoid unnecessarily obscuring various exemplaryembodiments.

In the accompanying figures, the size and relative sizes of layers,films, panels, regions, etc., may be exaggerated for clarity anddescriptive purposes. Also, like reference numerals denote likeelements.

When an element or layer is referred to as being “on,” “connected to,”or “coupled to” another element or layer, it may be directly on,connected to, or coupled to the other element or layer or interveningelements or layers may be present. When, however, an element or layer isreferred to as being “directly on,” “directly connected to,” or“directly coupled to” another element or layer, there are no interveningelements or layers present. For the purposes of this disclosure, “atleast one of X, Y, and Z” and “at least one selected from the groupconsisting of X, Y, and Z” may be construed as X only, Y only, Z only,or any combination of two or more of X, Y, and Z, such as, for instance,XYZ, XYY, YZ, and ZZ. Like numbers refer to like elements throughout. Asused herein, the term “and/or” includes any and all combinations of oneor more of the associated listed items.

Although the terms first, second, etc. may be used herein to describevarious elements, components, regions, layers, and/or sections, theseelements, components, regions, layers, and/or sections should not belimited by these terms. These terms are used to distinguish one element,component, region, layer, and/or section from another element,component, region, layer, and/or section. Thus, a first element,component, region, layer, and/or section discussed below could be termeda second element, component, region, layer, and/or section withoutdeparting from the teachings of the present disclosure.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, may be used herein for descriptive purposes, and,thereby, to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the drawings. Spatiallyrelative terms are intended to encompass different orientations of anapparatus in use, operation, and/or manufacture in addition to theorientation depicted in the drawings. For example, if the apparatus inthe drawings is turned over, elements described as “below” or “beneath”other elements or features would then be oriented “above” the otherelements or features. Thus, the exemplary term “below” can encompassboth an orientation of above and below. Furthermore, the apparatus maybe otherwise oriented (e.g., rotated 90 degrees or at otherorientations), and, as such, the spatially relative descriptors usedherein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting. As used herein, thesingular forms, “a,” “an,” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. Moreover,the terms “comprises,” “comprising,” “includes,” and/or “including,”when used in this specification, specify the presence of statedfeatures, integers, steps, operations, elements, components, and/orgroups thereof, but do not preclude the presence or addition of one ormore other features, integers, steps, operations, elements, components,and/or groups thereof.

Various exemplary embodiments are described herein with reference tosectional illustrations that are schematic illustrations of idealizedexemplary embodiments and/or intermediate structures. As such,variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, exemplary embodiments disclosed herein should not beconstrued as limited to the particular illustrated shapes of regions,but are to include deviations in shapes that result from, for instance,manufacturing. Regions illustrated in the drawings are schematic innature and their shapes are not intended to illustrate the actual shapeof a region of a device and are not intended to be limiting.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure is a part. Terms,such as those defined in commonly used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and will not be interpreted in anidealized or overly formal sense, unless expressly so defined herein.

Hereinafter, exemplary embodiments of the present disclosure will bedescribed in detail with reference to the accompanying drawings.

FIG. 1 is a sectional view of a display apparatus according to a firstexemplary embodiment of the present disclosure, and FIG. 2 is aperspective view of a light emitting part of the display apparatusaccording to the first exemplary embodiment of the present disclosure.

Referring to FIG. 1 , a display apparatus 100 according to the firstexemplary embodiment includes a light emitting diode part 110, a TFTpanel unit 130, and an anisotropic conductive film 150.

Referring to FIG. 1 and FIG. 2 , the light emitting diode part 110includes light emitting diodes 112, a support substrate 114, transparentelectrodes 116, a blocking part 118, an insulation layer 120, and firstconnection electrodes 122.

The light emitting diode part 110 includes a plurality of light emittingdiodes 112, and the plurality of light emitting diodes 112 is regularlyarranged on the support substrate 114. For example, the plurality oflight emitting diodes 112 may be arranged in a matrix form thereon, asshown in FIG. 2 . In this exemplary embodiment, the plurality of lightemitting diodes 112 includes a plurality of blue light emitting diodes112 a emitting blue light, a plurality of green light emitting diodes112 b emitting green light, and a plurality of red light emitting diodes112 c emitting red light. The plural blue light emitting diodes 112 a,the plural green light emitting diodes 112 b and the plural red lightemitting diodes 112 c are alternately arranged such that the blue lightemitting diode 112 a, the green light emitting diode 112 b and the redlight emitting diode 112 c are adjacent to one another.

In this exemplary embodiment, as shown in FIG. 2 , the light emittingdiode part 110 allows the display apparatus 100 to be driven by powerapplied from an exterior power source. That is, an image can bereproduced through on-off combination of the light emitting diodes 112in the light emitting diode part 110 without using a separate LCD.Accordingly, a region including a single light emitting diode 112 may beused as a sub-pixel in the display apparatus 100. As shown in FIG. 2 ,in the light emitting diode part 110, one sub-pixel may have a largersize than the light emitting diode 112 disposed inside the sub-pixel.

Referring to FIG. 1 again, each of the light emitting diodes 112 mayinclude an n-type semiconductor layer 23, an active layer 25, a p-typesemiconductor layer 27, an n-type electrode 31, a p-type electrode 33,and a wall 35. The n-type semiconductor layer 23, the active layer 25and the p-type semiconductor layer 27 may include Group III-V basedcompound semiconductors. By way of example, the n-type semiconductorlayer 23, the active layer 25 and the p-type semiconductor layer 27 mayinclude nitride semiconductors such as (Al, Ga, In)N. In other exemplaryembodiments, locations of the n-type semiconductor layer 23 and thep-type semiconductor layer 27 can be interchanged.

The n-type semiconductor layer 23 may include an n-type dopant (forexample, Si) and the p-type semiconductor layer 27 may include a p-typedopant (for example, Mg). The active layer 25 is interposed between then-type semiconductor layer 23 and the p-type semiconductor layer 27. Theactive layer 25 may have a multi-quantum well (MQW) structure and acomposition of the active layer 25 may be determined so as to emit lighthaving a desired peak wavelength.

In addition, the light emitting structure including the n-typesemiconductor layer 23, the active layer 25 and the p-type semiconductorlayer 27 may be formed similar to a vertical type light emitting diode112. In this structure, the n-type electrode 31 may be formed on anouter surface of the n-type semiconductor layer 23 and the p-typeelectrode 33 may be formed on an outer surface of the p-typesemiconductor layer 27.

Further, as shown in FIG. 1 , in order to couple each of the lightemitting diodes 112 similar to the vertical type light emitting diode tothe transparent electrode 116 of the support substrate 114, a bondingportion S may be formed between the p-type electrode 33 and thetransparent electrode 116, and the wall 35 may be formed to prevent thebonding portion S from escaping from a space between the p-typeelectrode 33 and the transparent electrode 116.

The wall 35 may be formed to cover a portion of the p-type electrode 33such that the p-type electrode 33 can be exposed on the p-typesemiconductor layer 27, and may be composed of a plurality of layers, asshown in the drawings. The wall 35 may include a first layer and asecond layer, and may be formed by forming the first layer including SiNon the p-type semiconductor layer 27 so as to cover a portion of thep-type electrode 33, followed by forming the second layer including SiO₂on the first layer. The second layer may have a greater thickness and asmaller width than the first layer.

The support substrate 114 is a substrate on which the plurality of lightemitting diodes 112 will be mounted, and may be an insulation substrate,a conductive substrate, or a circuit board. By way of example, thesupport substrate 114 may be a sapphire substrate, a gallium nitridesubstrate, a glass substrate, a silicon carbide substrate, a siliconsubstrate, a metal substrate, or a ceramic substrate. The supportsubstrate 114 is formed on an upper surface thereof with the pluralityof conductive patterns to be electrically connected to the plurality oflight emitting diodes 112 and may include a circuit pattern therein, asneeded. The support substrate 114 may be a flexible substrate.

The transparent electrode 116 may be formed on the support substrate 114and may be electrically connected to the p-type electrode 33 of thelight emitting diode 112. In this exemplary embodiment, a plurality oftransparent electrodes 116 may be formed on the support substrate 114,and one light emitting diode 112 may be coupled to one transparentelectrode 116, or the plurality of light emitting diodes 112 may becoupled to one transparent electrode 116, as needed. In addition, theplural transparent electrodes 116 may be separated from each other onthe support substrate 114. By way of example, the transparent electrodes116 may be formed of indium tin oxide (ITO) and the like.

The blocking part 118 is formed on the support substrate 114 and isprovided in plural. The blocking part 118 allows light emitted from thelight emitting diodes 112 to be emitted to the outside only through thetransparent electrodes 116 and prevents light emitted from a certainlight emitting diode from mixing with light emitted from adjacent lightemitting diodes 112. Accordingly, the blocking part 118 may be formedbetween the transparent electrodes 116 separated from each other and maybe formed to cover a portion of each of the transparent electrodes 116,as needed. In this exemplary embodiment, the blocking part 118 is formedof chromium (Cr).

The insulation layer 120 surrounds each of the light emitting diodes 112and covers an exposed surface of a connecting plane between the lightemitting diodes 112. With this structure, the insulation layer 120 maybe formed to partially cover the blocking part 118. In the structurewherein the insulation layer 120 surrounds each of the light emittingdiodes 112, the n-type semiconductor layer 23 and the n-type electrode31 of each of the light emitting diodes 112 can be exposed through theinsulation layer 120.

The first connection electrodes 122 cover the insulation layer 120 andmay also cover the n-type semiconductor layer 23 and the n-typeelectrode 31 not covered by the insulation layer 120. Accordingly, thefirst connection electrodes 122 may be electrically connected to then-type semiconductor layer 23.

The TFT panel unit 130 includes a panel substrate 132 and secondconnection electrodes 134, and is coupled to the light emitting diodepart 110 to supply power to the light emitting diode part 110. The TFTpanel unit 130 controls power supplied to the light emitting diode part110 to allow only some of the light emitting diodes 112 in the lightemitting diode part 110 to emit light.

The panel substrate 132 has a TFT drive circuit therein. The TFT drivecircuit may be a circuit for driving an active matrix (AM) or a circuitfor driving a passive matrix (PM).

The second connection electrode 134 may be electrically connected to theTFT drive circuit of the panel substrate 132 and to the first connectionelectrode 122 of the light emitting diode part 110. In this structure,power supplied through the TFT drive circuit can be supplied to each ofthe light emitting diodes 112 through the first and second connectionelectrodes 122, 134. In this exemplary embodiment, the second connectionelectrode 134 may be covered by a separate protective layer, which mayinclude SiN_(x).

The anisotropic conductive film 150 serves to electrically connect thelight emitting diode part 110 to the TFT panel unit 130. The anisotropicconductive film 150 includes an adhesive organic insulation material andcontains conductive particles uniformly dispersed therein to achieveelectrical connection. The anisotropic conductive film 150 exhibitsconductivity in the thickness direction thereof and insulationproperties in the plane direction thereof. In addition, the anisotropicconductive film exhibits adhesive properties and can be used to bond thelight emitting diode part 110 to the TFT panel such that the lightemitting diode part 110 can be electrically connected to the TFT paneltherethrough. Particularly, the anisotropic conductive film 150 can beadvantageously used to connect ITO electrodes which are difficult tosolder at high temperature.

As such, in the structure wherein the light emitting diode part 110 iscoupled to the TFT panel via the anisotropic conductive film 150, thefirst connection electrode 122 of the light emitting diode part 110 iselectrically connected to the second connection electrode 134 of the TFTpanel unit 130, thereby forming an electrode connection portion 152.

FIGS. 3A-3P and FIGS. 4A-4G are sectional views and plan viewsillustrating a process of forming the light emitting diode part 110 ofthe display apparatus 100 according to the first exemplary embodiment ofthe present disclosure.

The process of forming the light emitting diode part 110 according tothis exemplary embodiment will be described with reference to FIGS.3A-3P and FIGS. 4A-4G. First, as shown in FIG. 3A, an n-typesemiconductor layer 23, an active layer 25 and a p-type semiconductorlayer 27 are sequentially grown on a growth substrate. Then, a p-typeelectrode 33 is formed on the p-type semiconductor layer 27. In thisexemplary embodiment, a plurality of p-type electrodes 33 may be formedto be separated from each other by a predetermined distance such thatone p-type electrode 33 is provided to one light emitting diode 112.

Referring to FIG. 3B, after forming the p-type electrodes 33, a wall 35is formed on the p-type semiconductor layer 27. The wall 35 may becomposed of first and second layers. The first layer includes SiN and isformed to cover the entirety of the p-type semiconductor layer 27 whilecovering a portion of each of the p-type electrodes 33. The second layerincludes SiO₂ and is formed on the first layer. The second layer mayhave a greater thickness than the first layer and may be formed on aregion of the first layer in which the p-type electrode 33 is notformed.

Referring to FIG. 3C, after the wall 35 is formed on the p-typesemiconductor layer 27, the grown semiconductor layers are coupled to afirst substrate. In this process, the second layer of the wall 35 iscoupled to the first substrate. The first substrate may be the same asthe support substrate 114 and may be a sapphire substrate in thisexemplary embodiment.

Referring to FIG. 3D, with the semiconductor layers coupled to the firstsubstrate, the growth substrate may be removed from the semiconductorlayers by LLO and the semiconductor layers may be divided intoindividual light emitting diodes 112 by etching. Here, division of thesemiconductor layers into individual light emitting diodes 112 may beperformed by dry etching.

Referring to FIG. 3E, after the semiconductor layers are divided intothe individual light emitting diodes 112, n-type electrodes 31 may beformed on the n-type semiconductor layer 23. Alternatively, the n-typeelectrodes 31 may be formed before division of the semiconductor layersinto the individual light emitting diodes 112. Then, as shown in FIG.3F, the light emitting diodes 112 are coupled to a second substrate suchthat the n-type electrodes 31 can be coupled to the second substrate,followed by removing the first substrate. The second substrate may bethe same kind of substrate as the first substrate.

Then, as shown in FIG. 3G, the light emitting diodes 112 are coupled toa third substrate such that the wall 35 can be coupled to the thirdsubstrate, followed by removing the second substrate. In this exemplaryembodiment, the third substrate may be a stretchable substrate that isstretchable in the plane direction thereof. Thus, as shown in FIG. 3H,the stretchable third substrate is stretched to enlarge distancesbetween the light emitting diodes 112.

With the distances between the light emitting diodes 112 enlarged, thelight emitting diodes 112 are coupled to a fourth substrate such thatthe n-type electrodes 31 can be coupled to the fourth substrate, asshown in FIG. 3I. As a result, the distances between the light emittingdiodes 112 can be maintained by the stretchable third substrate. In thisexemplary embodiment, the fourth substrate may include a flexible baseand a bonding layer formed on the base.

Then, referring to FIG. 3J, the plurality of light emitting diodes 112arranged on the fourth substrate is bonded to the support substrate 114,which may be formed with a bonding portion S at a location correspondingto each of the light emitting diodes 112. With the transparentelectrodes 116 and the blocking part 118 formed on the support substrate114, the bonding portion S is formed at a mounting location of each ofthe light emitting diodes 112 on the support substrate 114. Accordingly,even when the entire plural light emitting diodes coupled to the fourthsubstrate are transferred to an upper surface of the support substrate114, the light emitting diodes 112 can be transferred only to locationsof the support substrate 114 at which the bonding portions S are formed.

Referring to FIG. 3K, external force may be applied only to the lightemitting diodes 112 disposed corresponding to the locations of thebonding portions S on the support substrate 114 among the light emittingdiodes 112 coupled to the fourth substrate, such that only the lightemitting diodes 112 disposed corresponding to the bonding portions S canbe bonded to the support substrate 114. As a result, as shown in FIG.3L, the light emitting diodes 112 can be coupled to the supportsubstrate at the locations of the bonding portions S thereon.

Although not shown in the drawings, in the case where only some lightemitting diodes 112 are selectively coupled to the support substrate 114by applying external force only to target light emitting diodes amongthe plurality of light emitting diodes 112 arranged on the fourthsubstrate as shown in FIG. 3K, the stretchable third substrate may beomitted. That is, only some light emitting diodes 112 may be coupled tothe support substrate 114 by selectively applying external force only totarget light emitting diodes to be coupled to the support substrate 114using a flexible fourth substrate instead of the second substrate shownin FIG. 3F.

In this exemplary embodiment, with regard to mounting the light emittingdiodes 112 on the support substrate 114 as shown in FIG. 3L, thefollowing description will be given of mounting blue light emittingdiodes 112 a, green light emitting diodes 112 b and red light emittingdiodes 112 c on the support substrate 114 with reference to FIGS. 4A-4G.Here, the processes of manufacturing each of the blue light emittingdiodes 112 a, the green light emitting diodes 112 b and the red lightemitting diodes 112 c are the same those shown in FIG. 3A to FIG. 3I.

Like FIG. 3J, FIG. 4A shows the bonding portions S formed on the supportsubstrate 114, in which the bonding portions S are formed at alllocations on the support substrate 114 at which the blue light emittingdiodes 112 a, the green light emitting diodes 112 b and the red lightemitting diodes 112 c are coupled, respectively. The bonding portions Smay be classified into first to third bonding portions S1, S2, S3. Thefirst bonding portion S1 is formed to bond the blue light emittingdiodes 112 a to the support substrate and the second bonding portion S2is formed to bond the green light emitting diodes 112 b thereto. Thethird bonding portion S3 is formed to bond the red light emitting diodes112 c thereto.

The first to third bonding portions S1, S2, S3 may have differentbonding temperatures. Specifically, the first bonding portion S1 has thehighest bonding temperature and the third bonding portion S3 has thelowest bonding temperature. For example, the first bonding portion S1 isformed of AgSn and has a bonding temperature of about 230° C. and thesecond bonding portion S2 is formed of ZnSn and has a bondingtemperature of about 198° C. The third bonding portion S3 is formed ofIn and has a bonding temperature of about 157° C. The bondingtemperatures of the first to third bonding portions S1, S2, S3 aredifferently set due to different bonding sequences of the light emittingdiodes 112 to the respective bonding portions S.

Since the blue light emitting diodes 112 a are first bonded to thesupport substrate 114, the first bonding portion S1 has the highestbonding temperature. Thus, since the first bonding portion S1 has ahigher bonding temperature than the second bonding portion S2 or thethird bonding portion S3, the first bonding portion S1 can maintain abonded state of the blue light emitting diodes 112 a during bonding ofthe green light emitting diodes 112 b or the red light emitting diodes112 c.

After the first to third bonding portions S1, S2, S3 are formed on thesupport substrate 114 as shown in FIG. 4A, the fourth substrate on whichthe blue light emitting diodes 112 a are formed is placed at acorresponding location on the support substrate 114, and the blue lightemitting diodes 112 a are coupled to the support substrate 114, as shownin FIG. 4B. Here, the distances between the blue light emitting diodes112 a formed on the fourth substrate are widened by the stretchablesubstrate, which is provided as the third substrate, as compared withthe distances between the blue light emitting diodes 112 a formed on thegrowth substrate. Accordingly, each of the blue light emitting diodes112 a is not disposed at a location corresponding to the second bondingportion S2 or the third bonding portion S3. Then, with the blue lightemitting diodes 112 a contacting the first bonding portion S1, the firstbonding portion S1 is heated to about 230° C. and cooled to bond theblue light emitting diodes 112 a to the support substrate 114 via thefirst bonding portion S1.

FIG. 4C shows the blue light emitting diodes 112 a bonded to the supportsubstrate 114. Thereafter, the fourth substrate on which the green lightemitting diodes 112 b are formed is placed at a corresponding locationon the support substrate 114, and the green light emitting diodes 112 bare bonded to the support substrate 114, as shown in FIG. 4D. Here, thedistances between the green light emitting diodes 112 b formed on thefourth substrate are greater than the distances between the green lightemitting diodes 112 b formed on the growth substrate, as describedabove. Accordingly, there is no interference between the blue lightemitting diode 112 a and the green light emitting diode 112 b placed atlocations corresponding to the second bonding portion S2 formed on thesupport substrate 114. Then, with the green light emitting diodes 112 bcontacting the second bonding portion S2, the second bonding portion S2is heated to about 198° C. and cooled to bond the green light emittingdiodes 112 b to the support substrate 114 via the second bonding portionS2. In this way, the green light emitting diodes 112 b can be bonded tothe support substrate 114.

FIG. 4E shows the blue light emitting diodes 112 a and the green lightemitting diodes 112 b bonded to the support substrate 114. Thereafter,the fourth substrate on which the red light emitting diodes 112 c areformed is placed at a corresponding location on the support substrate114, and the red light emitting diodes 112 c are bonded to the supportsubstrate 114, as shown in FIG. 4F. Here, the distances between the redlight emitting diodes 112 c formed on the fourth substrate are greaterthan the distances between the red light emitting diodes 112 c formed onthe growth substrate, as described above, thereby preventinginterference with the blue light emitting diodes 112 a or the greenlight emitting diodes 112 b disposed on the support substrate 114. Then,with the red light emitting diodes 112 c contacting the third bondingportion S3, the third bonding portion S3 are heated to about 157° C. andcooled to bond the red light emitting diodes 112 c to the supportsubstrate 114 via the third bonding portion S3. In this way, the greenlight emitting diodes 112 b can be bonded to the support substrate 114.FIG. 4G shows the blue light emitting diode 112 a, the green lightemitting diode 112 b and the red light emitting diode 112 c bonded tothe support substrate 114.

In this exemplary embodiment, separation distances between the bluelight emitting diode 112 a, the green light emitting diode 112 b and thered light emitting diode 112 c formed on the different fourth substratesmay be at least twice the width of each of the light emitting diodes112. In this way, with the distances between the light emitting diodesmaintained at at least twice the width of each of the light emittingdiodes on the support substrate 114, the light emitting diodes 112 arebonded to the support substrate 114, thereby preventing interferencebetween the other light emitting diodes 112.

FIG. 3M is a sectional view corresponding to the plan view shown in FIG.4G. That is, referring to FIG. 3M, each of the blue light emittingdiodes 112 a, the green light emitting diodes 112 b and the red lightemitting diodes 112 c is bonded to the support substrate 114. In thisstate, an insulation layer 120 may be formed to cover the entirety ofeach of the light emitting diodes 112 excluding a portion thereof, asshown in FIG. 3N. The insulation layer 120 is formed to cover both thetransparent electrodes 116 and the blocking part 118 while surroundingeach of the light emitting diodes 112. With this structure, theinsulation layer 120 can prevent the transparent electrode 116electrically connected to each of the light emitting diodes 112 frombeing exposed to the outside. An upper surface of the n-typesemiconductor layer 23 and the n-type electrode 31 of each of the lightemitting diodes 112 can be exposed through an upper surface of theinsulation layer 120.

With the n-type semiconductor layer 23 and the n-type electrode 31exposed through the upper surface of the insulation layer 120, firstconnection electrodes 122 may be formed on the upper surface of theinsulation layer 120 to cover the n-type semiconductor layer 23 and then-type electrodes 31, as shown in FIG. 3O. As a result, the lightemitting diode part 110 according to this exemplary embodiment can beformed.

Thereafter, the light emitting diode part 110 is bonded to the TFT panelunit 130 via an anisotropic connection film, as shown in FIG. 3P,thereby providing the display apparatus 100 according to the firstexemplary embodiment, as shown in FIG. 1 .

FIG. 5 is a sectional view of a display apparatus according to a secondexemplary embodiment of the present disclosure.

Referring to FIG. 5 , a display apparatus 100 according to the secondexemplary embodiment of the present disclosure includes a light emittingdiode part 110, a TFT panel unit 130, and an anisotropic conductive film150. Description of the same components as those of the first exemplaryembodiment will be omitted.

The light emitting diode part 110 includes light emitting diodes 112,transparent electrodes 116, a blocking part 118, an insulation layer120, first connection electrodes 122, a transparent substrate 124, aphosphor layer 126, and a protective substrate 128.

The light emitting diode part 110 includes a plurality of light emittingdiodes 112, and blue light emitting diodes 112 a emitting blue light maybe used as the light emitting diodes 112. The blue light emitting diodes112 a are electrically connected to the transparent electrodes 116 andthe blocking part 118 may be formed between the transparent electrodes116. In addition, the transparent substrate 124 may be formed on thetransparent electrode 116. The transparent substrate 124 may serve asthe support substrate 114 of the display apparatus 100 according to thefirst exemplary embodiment. Alternatively, as in the first exemplaryembodiment, after forming the light emitting diode part 110 using thesupport substrate 114, the support substrate 114 may be removedtherefrom and the transparent substrate 124 may be formed again.

The phosphor layer 126 may be formed on an upper surface of thetransparent substrate 124. The phosphor layer 126 may be formed on theblue light emitting diodes 112 a such that one of a green phosphor layer126 b, a red phosphor layer 126 c and a transparent layer 126 e isformed thereon. In addition, a blocking layer 126 d may be formedbetween the green phosphor layer 126 b, the red phosphor layer 126 c andthe transparent layer 126 e. The green phosphor layer 126 b convertswavelengths of light emitted from the blue light emitting diode 112 asuch that green light can be emitted from the green phosphor layer 126b, and the red phosphor layer 126 c converts wavelengths of lightemitted from the blue light emitting diode 112 a such that red light canbe emitted from the red phosphor layer 126 c. The transparent layer 126e is placed near the green phosphor layer 126 b and the red phosphorlayer 126 c to allow blue light emitted from the blue light emittingdiode 112 a to pass therethrough. Accordingly, red light, green lightand blue light can be emitted through the phosphor layer 126.

The protective substrate 128 may be formed on an upper surface of thephosphor layer 126. The protective substrate 128 can prevent thephosphor layer 126 from being exposed to the outside and may be formedof a transparent material as in the transparent substrate 124.

FIG. 6 is a sectional view of a display apparatus according to a thirdexemplary embodiment of the present disclosure.

Referring to FIG. 6 , a display apparatus 100 according to the thirdexemplary embodiment includes a light emitting diode part 110, a TFTpanel unit 130, and an anisotropic conductive film 150. Description ofthe same components as those of the first exemplary embodiment will beomitted.

The light emitting diode part 110 includes light emitting diodes 112,transparent electrodes 116, a blocking part 118, a white phosphor film125, and a color film.

The light emitting diode part 110 includes a plurality of light emittingdiodes 112, and blue light emitting diodes 112 a are used as in thesecond exemplary embodiment. The blue light emitting diodes 112 a areelectrically connected to the transparent electrodes 116 and theblocking part 118 may be formed between the transparent electrodes 116.The white phosphor film 125 may be formed on an upper surface of thetransparent electrode 116.

The white phosphor film 125 converts blue light emitted from the bluelight emitting diode 112 a into white light. To this end, the whitephosphor film 125 may include a green phosphor and a red phosphor.

The color filter 127 may be formed on an upper surface of the whitephosphor film 125. The color filter 127 may be formed in a film shapeand filters white light emitted from the white phosphor film 125excluding one of blue light, green light and red light of the whitelight. The color filter 127 may include a blue light portion 127 a thatfilters white light to allow blue light to pass therethrough, a greenlight portion 127 b that filters white light to allow green light topass therethrough, and a red light portion 127 c that filters whitelight to allow red light to pass therethrough. The color filter 127 mayfurther include a transparent portion 127 e to allow white light to passtherethrough without wavelength conversion.

The blue light portion 127 a, the green light portion 127 b, the redlight portion 127 c and the transparent portion 127 e may be disposedadjacent one another. Alternatively, a light blocking portion 127 d maybe formed between the blue light portion 127 a, the green light portion127 b, the red light portion 127 c and the transparent portion 127 e.

FIG. 7 is a sectional view of a display apparatus according to a fourthexemplary embodiment of the present disclosure.

Referring to FIG. 7 , a display apparatus 100 according to the fourthexemplary embodiment includes a light emitting diode part 110, a TFTpanel unit 130, and an anisotropic conductive film 150. Description ofthe same components as those of the first and third exemplaryembodiments will be omitted.

The light emitting diode part 110 includes light emitting diodes 112,transparent electrodes 116, a blocking part 118, a transparent substrate124, a white phosphor film 125, and a color film.

The light emitting diode part 110 includes a plurality of light emittingdiodes 112, and blue light emitting diodes 112 a are used as in thesecond exemplary embodiment. The blue light emitting diodes 112 a areelectrically connected to the transparent electrodes 116 and theblocking part 118 may be formed between the transparent electrodes 116.The transparent substrate 124 may be formed on an upper surface of thetransparent electrode 116.

The transparent substrate 124 may serve as the support substrate 114 ofthe display apparatus 100 according to the first exemplary embodiment.Alternatively, as in the first exemplary embodiment, after forming thelight emitting diode part 110 using the support substrate 114, thesupport substrate 114 may be removed therefrom and the transparentsubstrate 124 may be formed again.

The white phosphor film 125 may be formed on an upper surface of thetransparent electrode 116 and the color filter 127 may be formed on anupper surface of the white phosphor film 125. The white phosphor film125 and the color filter 127 are the same as those of the displayapparatus according to the third exemplary embodiment and detaileddescriptions thereof will be omitted.

Referring to FIG. 8 , a display apparatus according to a fifth exemplaryembodiment of the present invention includes a backlight unit 200 and aTFT-LCD panel unit 300.

The backlight unit 200 illuminates the display apparatus. In thisexemplary embodiment, the backlight unit 200 has substantially the samestructure as the display apparatus according to the fourth exemplaryembodiment excluding the color filter 127.

A first driver 260 controls power to be applied to blue light emittingdiodes 212 a disposed inside the backlight unit 200. Brightness andoperation of the blue light emitting diodes 212 a of the backlight unit200 can be controlled by the first driver 260.

The TFT-LCD panel unit 300 realizes a desired color when light emittedfrom the backlight unit 200 passes through the TFT-LCD panel unit 300.As shown in FIG. 8 , the TFT-LCD panel unit 300 includes liquid crystalsand color filters, which include a blue color filter configured to allowblue light to pass therethrough, a green color filter configured toallow green light to pass therethrough, a red color filter configured toallow red light to pass therethrough, and a transparent filterconfigured to allow white light to pass therethrough. The liquidcrystals are disposed under each of the color filters and determinetransmittance of light towards the color filters therethrough.

A second driver 310 may individually control the liquid crystals of theTFT-LCD panel unit 300 to allow light to pass through the liquidcrystals. That is, a single pixel P includes four liquid crystals andthe second driver 310 controls transmittance of light through control ofeach of the liquid crystals such that a desired color can be realized inthe corresponding pixel P.

In this way, the second driver 310 is driven to control the TFT-LCDpanel unit 300 so as to allow the TFT-LCD panel unit 300 to realize adesired image, and a control signal sent from the second driver 310 tothe TFT-LCD panel unit 300 may also be sent to the first driver 260.That is, the first driver 260 can control the backlight unit 200 usingthe same control signal as the control signal used by the second driver310 at the same time point. Accordingly, operation of each of the bluelight emitting diodes 212 a in the backlight unit 200 can be controlledthrough control of the first driver 260.

In this way, the first driver 260 and the second driver 310 areinterlinked so as to send the same control signal. The backlight unit200 may allow some of the plural blue light emitting diodes 212 a toemit light under control of the first driver 260 and may allow light topass through only some liquid crystals in the TFT-LCD panel unit 300under control of the second driver 310. Accordingly, in the backlightunit 200, only some liquid crystals disposed above the blue lightemitting diodes 212 a, which are controlled to emit light, may becontrolled to allow light to pass therethrough.

Although a typical display apparatus also includes the TFT-LCD panelunit 300 and the backlight unit 200, the backlight unit 200 of thetypical display apparatus does not include a separate driver and is keptturned on during operation of the TFT-LCD panel unit 300. With thisstructure, the typical display apparatus has a problem of high powerconsumption due to operation of the backlight unit since the backlightunit 200 continues to operate except in the case where the TFT-LCD panelunit 300 is not operated. However, since the backlight unit 200according to this exemplary embodiment is operated in association withthe TFT-LCD panel unit 300, the display apparatus according to thisexemplary embodiment can be controlled in a unit of the pixel P duringoperation of the overall display apparatus, so that the overallbacklight unit 200 is not driven during operation of the displayapparatus, thereby achieving reduction in power consumption.

Furthermore, since the TFT-LCD panel unit 300 controls a display screendepending upon transmittance of light therethrough, there is a limit inaccurate control of brightness. However, in the display apparatusincluding the backlight unit 200 according to this exemplary embodiment,the backlight unit 200 supplies light, thereby achieving more accuratecontrol of brightness than the typical display apparatus.

In the display apparatus according to the fifth exemplary embodiment,the backlight unit 200 includes the blue light emitting diodes 212 asuch that one blue light emitting diode corresponds to one pixel P ofthe TFT-LCD panel unit 300. Alternatively, the backlight unit 200 mayinclude the blue light emitting diodes 212 a such that one blue lightemitting diode 212 a corresponds to hundreds of pixels P (for examples,1000 pixels or less). That is, one blue light emitting diode 212 acorresponding to hundreds of pixels P is driven, thereby enablingreduction in power consumption through reduction in the number of bluelight emitting diodes 212 a.

FIG. 9 is a sectional view of a display apparatus according to a sixthexemplary embodiment of the present disclosure, FIG. 10A is a top planview of the display apparatus according to the sixth exemplaryembodiment of the present disclosure, and FIG. 10B is a top plan view ofa modification of the display apparatus according to the sixth exemplaryembodiment of the present disclosure.

Referring to FIG. 9 , FIG. 10A and FIG. 10B, a display apparatus 100 aaccording to the sixth exemplary embodiment includes a growth substrate21, light emitting structures 123, n-type bumps 131, p-type bumps 133, asupport substrate 37, and a wavelength conversion part 43.

The growth substrate 21 may be selected from among any substratesallowing growth of nitride semiconductor layers thereon and may be aninsulation or conductive substrate. By way of example, the growthsubstrate 21 may be a sapphire substrate, a silicon substrate, a siliconcarbide substrate, an aluminum nitride substrate, or a gallium nitridesubstrate. In this exemplary embodiment, the growth substrate 21 may bea sapphire substrate and may include a C-plane as a growth plane onwhich nitride semiconductor layers are grown.

The growth substrate 21 may be formed of a transparent material in orderto allow light emitted from nitride semiconductor layers grown thereonto be emitted to the outside through the growth substrate 21. The growthsubstrate 21 may be formed as thin as possible so as to have a thicknessof about 50 μm to 100 μm, and then may be removed from the displayapparatus 100 a by laser beams, as will be described below.

Each of the light emitting structures 123 includes an n-typesemiconductor layer 23, an active layer 25 disposed on the n-typesemiconductor layer 23, and a p-type semiconductor layer 27 disposed onthe active layer 25. The n-type semiconductor layer 23, the active layer25 and the p-type semiconductor layer 27 may include a Group III-V basedcompound semiconductor, for example, a nitride semiconductor such as(Al, Ga, In)N. In other exemplary embodiments, locations of the n-typesemiconductor layer 23 and the p-type semiconductor layer 27 can beinterchanged.

The n-type semiconductor layer 23 may include an n-type dopant (forexample, Si) and the p-type semiconductor layer 27 may include a p-typedopant (for example, Mg). The active layer 25 may have a multi-quantumwell (MQW) structure and a composition of the active layer may bedetermined so as to emit light having a desired peak wavelength. In thisexemplary embodiment, the active layer 25 may be configured to emit bluelight or UV light.

As shown in FIG. 9 , the light emitting structure 123 may include apartially exposed region of the n-type semiconductor layer 23, which isformed by partially removing the p-type semiconductor layer 27 and theactive layer 25. An n-type electrode pad may be placed on the exposedregion of the n-type semiconductor layer 23 and a p-type electrode padmay be placed on the p-type semiconductor layer 27.

Although the light emitting structure 123 uses a flip-chip type lightemitting diode in this exemplary embodiment, it should be understoodthat a vertical type light emitting diode or a lateral type lightemitting diode may also be used. In the sixth exemplary embodiment, eachof the light emitting structures may have a size of about 2 μm to 50 μm.

In addition, as shown in FIG. 9 , a plurality of light emittingstructures 123 may be grown in a predetermined pattern on the growthsubstrate. That is, the plurality of light emitting structures 123 maybe grown on the growth substrate 21 such that a red light portion 43 a,a green light portion 43 b and a blue light portion 43 c are disposed onthe plurality of light emitting structures 123, as shown in FIG. 10A andFIG. 10B. As such, each of the light emitting structures 123 grown onthe growth substrate 21 may be used as a single light emitting diode. Asa result, the plurality of light emitting diodes may be arranged on thegrowth substrate 21 to form an array of light emitting diodes. The arrayof light emitting diodes is simultaneously grown on the growth substrate21 and includes a plurality of light emitting diodes arranged in apredetermined pattern on a plane of the growth substrate 21.

The support substrate 37 is a substrate on which the plurality of lightemitting structures 123 is mounted, and may include a plurality ofconductive patterns 135 formed on an upper surface thereof. The supportsubstrate 37 may be an insulation substrate, a conductive substrate, ora circuit board. By way of example, the support substrate 37 may be asapphire substrate, a gallium nitride substrate, a glass substrate, asilicon carbide substrate, a silicon substrate, a metal substrate, or aceramic substrate. The support substrate 37 is formed on the uppersurface thereof with the plurality of conductive patterns 135 to beelectrically connected to the light emitting structures 123 and mayinclude a circuit pattern therein.

The conductive patterns 135 may be formed on the upper surface of thesupport substrate 37 to be electrically connected to the plurality oflight emitting diodes, respectively, and the plurality of light emittingdiodes may be electrically connected to each other via the circuitpattern formed inside the substrate.

Further, an n-type substrate electrode 39 and a p-type substrateelectrode 41 may be respectively formed on one or more conductivepatterns of the plural conductive patterns 135 to be electricallyconnected to an external power source.

As such, the support substrate 37 having the conductive patterns 135formed thereon may be coupled to the growth substrate 21 having thelight emitting structures 123 grown thereon. That is, the growthsubstrate 21 having the light emitting structures 123 used as the lightemitting diodes is turned upside down and electrically connected to thesupport substrate 37 such that the light emitting structures 123electrically contact the conductive patterns 135 formed on the uppersurface of the support substrate 37. As a result, the plurality of lightemitting structures 123 is electrically connected to the plurality ofconductive patterns 135.

The plurality light emitting structures 123 may be coupled to theplurality of conductive patterns 135 via the n-type bumps 131 and thep-type bumps 133, respectively. Each of the n-type bumps 131 is formedat a side of the n-type semiconductor layer 23 to be electricallyconnected to the exposed n-type semiconductor layer 23 of the lightemitting structure 123, and each of the p-type bumps 133 is formed at aside of the p-type semiconductor layer 27 to be electrically connectedto the p-type semiconductor layer 27. With this structure, the lightemitting structures 123 may be electrically connected to the pluralityof conductive patterns 135, respectively.

The n-type bumps 131 and the p-type bumps 133 serve to couple the lightemitting structures 123 to the support substrate 37, and may include ametallic material to allow the plurality of light emitting structures123 and the plurality of conductive patterns 135 to be electricallyconnected to each other therethrough.

Thus, the growth substrate 21 having the light emitting structures 123grown thereon may be coupled to the support substrate 37 having theconductive patterns 135 formed thereon via the n-type bumps 131 and thep-type bumps 133, such that the plurality of light emitting structures123 is placed under the growth substrate 21, as shown in FIG. 9 .

As described above, the wavelength conversion part 43 is disposed on anupper surface of each of the light emitting structures 123 in thestructure wherein the light emitting structures 123 are coupled to thesupport substrate 37. Specifically, as shown in FIG. 9 , in thestructure wherein the growth substrate 21 is disposed on the lightemitting structures 123, the wavelength conversion part 43 may bedisposed on the upper surface of the growth substrate 21.

In the sixth exemplary embodiment, the wavelength conversion part 43 maybe formed in a film shape and may include the red light portion 43 a,which converts light emitted from the plurality of light emittingstructures 123 into red light, the green light portion 43 b, whichconverts light emitted from the plurality of light emitting structures123 into green light, and the blue light portion 43 c, which convertslight emitted from the plurality of light emitting structures 123 intoblue light. Here, if light emitted from the plurality of light emittingstructures 123 is blue light, there is no need for a separate blue lightportion 43 c. Thus, the wavelength conversion part 43 may include atransparent portion so as to allow light emitted from the light emittingstructure 123 disposed at a location of the blue light portion 43 c topass therethrough without being subjected to wavelength conversion.

If light emitted from the plurality of light emitting structures 123 isUV light, the wavelength conversion part 43 may include the red lightportion 43 a, the green light portion 43 b, and the blue light portion43 c. In this structure, each of the red light portion 43 a, the greenlight portion 43 b and the blue light portion 43 c may include phosphorsfor converting the wavelengths of light emitted from the light emittingstructures 123.

That is, the red light portion 43 a may include at least one of quantumdot phosphors, sulfide phosphors and fluoride phosphors in order toconvert light emitted from the corresponding light emitting structure123 into red light having a peak wavelength of 610 nm to 650 nm. Thefluoride-based phosphors may be phosphors represented by FormulaA₂MF₆:MN⁴⁺, wherein A is one of Li, Na, K, Ba, Rb, Cs, Mg, Ca, Se and Znand M is one of Ti, Si, Zr, Sn and Ge. The green light portion 43 b mayinclude at least one of BAM (Ba—Al—Mg) phosphors, quantum dot phosphors,silicate phosphors, bata-SiAlON phosphors, garnet phosphors, LSNphosphors and fluoride phosphors in order to convert light emitted fromthe light emitting structure 123 into green light having a peakwavelength of 500 nm to 570 nm. If light emitted from the plurality oflight emitting structures 123 is UV light, the blue light portion 43 cmay include phosphors capable of converting UV light into blue lighthaving a peak wavelength of 460 nm to 480 nm.

In this exemplary embodiment, the red light portion 43 a, the greenlight portion 43 b and the blue light portion 43 c may be restrictivelyformed only on the upper surfaces of the light emitting structures 123,as shown in FIG. 10 (a. That is, in the wavelength conversion part 43formed in a film shape, the red light portion 43 a, the green lightportion 43 b and the blue light portion 43 c may be arrangedcorresponding to the arrangement pattern of the plurality of lightemitting structures 123 in plan view.

As such, light emitted from the plurality of light emitting structures123 is subjected to wavelength conversion through the wavelengthconversion part 43 having the red light portion 43 a, the green lightportion 43 b and the blue light portion 43 c distributed therein to emitred light, green light and blue light at the corresponding locations. Inthis exemplary embodiment, the wavelength conversion part 43 includes ablocking portion 43 d blocking light emitted from the light emittingstructures 123 and formed where the red light portion 43 a, the greenlight portion 43 b and the blue light portion 43 c are not distributed.In this structure, light emitted from the plurality of light emittingstructures 123 can be subjected to wavelength conversion only throughthe red light portion 43 a, the green light portion 43 b and the bluelight portion 43 c before discharge to the outside, and the blockingportion 43 d can prevent light emitted from adjacent light emittingstructures 123 from mixing with each other.

As described above, the wavelength conversion part 43 is formed in afilm shape in which the red light portion 43 a, the green light portion43 b, the blue light portion 43 c, and the blocking portion 43 d aredisposed on a coplanar surface, whereby light emitted from the pluralityof light emitting structures 123 can be discharged to the outside onlythrough the red light portion 43 a, the green light portion 43 b and theblue light portion 43 c.

Each of the red light portion 43 a, the green light portion 43 b and theblue light portion 43 c may be formed in a circular shape so as to beformed only on the upper surfaces of the light emitting structures 123in plan view, as shown in FIG. 10A, or may have a rectangular shape inplan view, as shown in FIG. 10B. This structure allows one or more lightportions among the red light portion 43 a, the green light portion 43 band the blue light portion 43 c to be disposed on the upper surfaces ofone or more light emitting structures 123.

In this structure, since the growth substrate 21 is a transparentsubstrate, light emitted from the plurality of light emitting structures123 can be discharged through a side surface of the growth substrate 21while passing through the transparent growth substrate 21. As a result,light emitted from one light emitting structure 123 can also bedischarged not only to the red light portion 43 a, but also to the greenlight portion 43 b or the blue light portion 43 c. Thus, in order toprevent this problem, the blocking portion 43 d may be disposed betweenthe red light portion 43 a, the green light portion 43 b and the bluelight portion 43 c. In addition, a separation distance (L) between thered light portion 43 a, the green light portion 43 b and the blue lightportion 43 c must not be greater than a distance (d) from the activelayer of the light emitting structure 123, through which light isemitted, to the wavelength conversion part 43. In this way, with thestructure wherein the separation distance (L) is greater than or equalto the distance (d), the display apparatus can minimize interference oflight spreading in a lateral direction from the growth substrate 21.

FIG. 11 is a sectional view of a display apparatus according to aseventh exemplary embodiment of the present disclosure.

Referring to FIG. 11 , a display apparatus 100 a according to theseventh exemplary embodiment includes light emitting structures 123,n-type bumps 131, p-type bumps 133, a support substrate 37, and awavelength conversion part 43. Description of the same components asthose of the sixth exemplary embodiment will be omitted.

As described in the sixth exemplary embodiment, since light emitted fromthe light emitting structures 123 is discharged to the wavelengthconversion part 43 through the growth substrate 21, light emitted fromthe plurality of light emitting structures 123 can be mixed whilepassing through the growth substrate 21. Accordingly, in the seventhexemplary embodiment, the growth substrate 21 is removed and thewavelength conversion part 43 may be formed on an upper surface of thelight emitting structure 123. In this structure, the distance from theactive layer 25 of the light emitting structure 123 to the wavelengthconversion part 43 is decreased as compared with that in the sixthexemplary embodiment, light emitted from the light emitting structure123 can be directly discharged to the wavelength conversion part 43.

In the seventh exemplary embodiment, the wavelength conversion part 43may have a film shape including the red light portion 43 a, the greenlight portion 43 b, the blue light portion 43 c, and the blockingportion 43 d, as in the sixth exemplary embodiment.

In addition, the plural light emitting structures 123 are arranged onthe support substrate 37 to form an array of light emitting diodes, asin the sixth exemplary embodiment.

FIG. 12 is a sectional view of a display apparatus according to a eighthexemplary embodiment of the present disclosure.

Referring to FIG. 12 , a display apparatus 100 a according to the eighthexemplary embodiment includes light emitting structures 123, n-typebumps 131, p-type bumps 133, a support substrate 37, and a wavelengthconversion part 43. Description of the same components as those of thesixth exemplary embodiment will be omitted.

In the display apparatus 100 a according to the eighth exemplaryembodiment, the growth substrate 21 is removed and the wavelengthconversion part 43 is formed on an upper surface of the light emittingstructure 123, as in the seventh exemplary embodiment. However, unlikethe seventh exemplary embodiment, in the wavelength conversion part 43according to the eighth exemplary embodiment, one of the red lightportion 43 a, the green light portion 43 b and the blue light portion 43c may be directly formed on the upper surface of each of the lightemitting structures 123. Thus, in the wavelength conversion part 43according to the eighth exemplary embodiment, the red light portion 43a, the green light portion 43 b and the blue light portion 43 c may beseparated from each other and a separate blocking portion 43 d may beomitted.

Further, if the light emitting structure 123 is a UV light emittingdiode configured to emit UV light, the wavelength conversion part 43 mayinclude the blue light portion 43 c configured to convert UV light intoblue light, and if the light emitting structure 123 is a blue lightemitting diode configured to emit blue light, a separate wavelengthconversion part 43 may not be formed on the upper surface of the bluelight emitting diode. In some exemplary embodiments, a transparent resinmay be formed on the upper surface of the blue light emitting diode toprevent wavelength conversion of light.

In addition, the plural light emitting structures 123 are arranged onthe support substrate 37 to form an array of light emitting diodes, asin the sixth exemplary embodiment.

FIG. 13 is a sectional view of a display apparatus according to a ninthexemplary embodiment of the present disclosure.

Referring to FIG. 13 , a display apparatus 100 a according to the ninthexemplary embodiment includes a growth substrate 21, a high resistancelayer 45, light emitting structures 123, and a wavelength conversionpart 43. Description of the same components as those of the sixthexemplary embodiment will be omitted.

In the ninth exemplary embodiment, the light emitting structures 123 maybe grown on an upper surface of the growth substrate 21, which may beformed of an opaque material such as Si. With this structure, thedisplay apparatus can minimize mixing of light emitted from the lightemitting structures 123 before reaching the wavelength conversion part43.

In addition, the high resistance layer 45 is formed on the upper surfaceof the growth substrate 21 and the light emitting structures 123 areformed on an upper surface of the high resistance layer 45, whereby thehigh resistance layer 45 can secure insulation between the lightemitting structures 123 even in the case where the growth substrate 21exhibits conductivity. In addition, the plural light emitting structures123 are arranged on the support substrate 37 to form an array of lightemitting diodes, as in the sixth exemplary embodiment.

FIG. 14 is a sectional view of a display apparatus according to a tenthexemplary embodiment of the present disclosure.

Referring to FIG. 14 , a display apparatus 100 a according to the tenthexemplary embodiment includes a growth substrate 21, a high resistancelayer 45, light emitting structures 123, and a wavelength conversionpart 43. Description of the same components as those of the sixthexemplary embodiment will be omitted.

In the display apparatus 100 a according to the tenth exemplaryembodiment, the high resistance layer 45 is formed on an upper surfaceof the opaque growth substrate 21, and the light emitting structures 123are formed on an upper surface of the high resistance layer 45, as inthe ninth exemplary embodiment. In addition, a plurality of trenches Hmay be formed on the high resistance layer 45 and the growth substrate21 to be placed between the light emitting structures 123. The pluralityof trenches H may be formed by etching and may completely isolate thelight emitting structures 123 from each other so as to secure insulationtherebetween. In addition, the plural light emitting structures 123 arearranged on the support substrate 37 to form an array of light emittingdiodes, as in the sixth exemplary embodiment.

FIG. 15 is a sectional view of a display apparatus according to aeleventh exemplary embodiment of the present disclosure.

Referring to FIG. 15 , a display apparatus according to the eleventhexemplary embodiment may include a transparent electrode 47, lightemitting structures 123, a support substrate 37, a white phosphor film49, and a wavelength conversion part 43. Description of the samecomponents as those of the sixth exemplary embodiment will be omitted.

In the display apparatus 100 a according to the eleventh exemplaryembodiment, the light emitting structures 123 are grown on an uppersurface of the growth substrate 21 and electrode pads 51 are formed onupper surfaces of the light emitting structures 123, as in the firstexemplary embodiment. In addition, with the growth substrate 21 turnedupside down, the light emitting structures 123 are coupled to thesupport substrate 37 having substrate electrodes 55 formed on an uppersurface thereof such that the electrode pads 51 are electricallyconnected to the support substrate 37 via bumps 53. The growth substrate21 can be removed later and the transparent electrode 47 may be disposedon the upper surfaces of the light emitting structures 123 from whichthe growth substrate 21 is removed. As a result, as shown in FIG. 15 ,there is provided a structure wherein the light emitting structures 123are mounted on the support substrate 37 and the transparent electrode 47is formed on the light emitting structures 123.

In addition, the plural light emitting structures 123 are arranged onthe support substrate 37 to form an array of light emitting diodes, asin the sixth exemplary embodiment. The plural light emitting structures123 may form an array of flip-chip type light emitting diodes or anarray of vertical type light emitting diodes.

In the structure shown in FIG. 15 , the white phosphor film 49 is formedon the growth substrate 21 to convert light emitted from the lightemitting structures 123 into white light and the wavelength conversionpart 43 is formed on the upper surface of the white phosphor film 49.Although the white phosphor film 49 is illustrated as having a filmshape in this exemplary embodiment, other implementations are alsopossible as needed.

In the eleventh exemplary embodiment, the light emitting structures 123are light emitting diodes configured to emit blue light or UV light asin the sixth exemplary embodiment, and the white phosphor film 49converts blue light or UV light emitted from the light emittingstructures 123 into white light. Accordingly, light emitted through thewhite phosphor film 49 may be converted into red light through the redlight portion 43 a of the wavelength conversion part 43, green lightthrough the green light portion 43 b thereof, and blue light through theblue light portion 43 c thereof.

In addition, the wavelength conversion part 43 includes a blockingportion 43 d formed between the red light portion 43 a, the green lightportion 43 b and the blue light portion 43 c to block light emittedthrough the white phosphor film 49 from being discharged to otherregions excluding the red light portion 43 a, the green light portion 43b, and the blue light portion 43 c.

With the light emitting structures 123 coupled to the support substrate37, the growth substrate 21 may be separated from the light emittingstructures 123 before formation of the white phosphor film 49, as in theseventh exemplary embodiment. The growth substrate 21 is a transparentsubstrate and is removed from the light emitting structures, therebypreventing light emitted from the light emitting structures 123 frombeing mixed with each other in the growth substrate 21 before conversioninto white light in the white phosphor film 49.

The support substrate 37 may be a hard substrate, a flexible substrate,or a stretchable substrate. Alternatively, the support substrate 37 maybe a printed circuit board (PCB) having integrated circuits printedthereon. By way of example, the support substrate may be a Si CMOS IC oran organic IC.

As described above, in order to mount the light emitting structures on aflexible substrate, the growth substrate 21 is removed from the lightemitting structures by laser lift-off, wet etching or the like, and thenthe wavelength conversion part is printed on or attached in the form ofa film to the upper surfaces of the light emitting structures. As aresult, since the light emitting structures coupled to an upper surfaceof the flexible support substrate are separated from each other, theshape of the display apparatus can be conveniently modified as needed.

For the display apparatus according to the eleventh exemplaryembodiment, formation of the white phosphor film 49 on the uppersurfaces of the light emitting structures 123 more advantageous in termsof manufacturing process than formation of a phosphor layer on an uppersurface of each of the light emitting structures 123. Since theplurality of light emitting structures 123 has a micrometer scale,formation of the phosphor layer on the upper surface of each of thelight emitting structures 123 provides a difficult manufacturingprocess.

In addition, formation of the white phosphor film 49 on the entire uppersurfaces of the plural light emitting structures 123 is moreadvantageous in terms of color reproduction of the display apparatusthrough color mixing and diffusion than formation of the wavelengthconversion part 43 alone on the upper surfaces of the plural lightemitting structures 123.

FIGS. 16A, 16B, 16C, and 16D are sectional views of a display apparatusaccording to a twelfth exemplary embodiment of the present disclosure.Particularly, FIG. 16A to FIG. 16D are sectional views of a process offorming a wavelength conversion part of the display apparatus accordingto the twelfth exemplary embodiment.

Referring to FIG. 16A to FIG. 16D, the display apparatus according tothe twelfth exemplary embodiment includes light emitting structures 123,n-type bumps 131, p-type bumps 133, a support substrate 37, atransparent member T, and a wavelength conversion part 43. Descriptionof the same components as those of the above exemplary embodiments willbe omitted.

In the display apparatus 100 a according to the eleventh exemplaryembodiment, a plurality of light emitting structures 123 is grown on anupper surface of the growth substrate 21 and is then coupled to thesupport substrate 37 on which a plurality of conductive patterns 135 isformed, as in the above exemplary embodiments. After the plurality oflight emitting structures 123 is coupled to the support substrate 37,the growth substrate 21 is removed from the light emitting structures,and the transparent member T is formed on upper surfaces of theplurality of light emitting structures 123. Thereafter, a blockingportion 43 d is formed on an upper surface of the transparent member Tto prevent color mixing, and a mask pattern M is formed on an uppersurface of the blocking portion 43 d to form a red light portion 43 a, agreen light portion 43 b and a blue light portion 43 c. Although thefollowing description will focus on the formation of the red lightportion 43 a, the green light portion 43 b and the blue light portion 43c may also be formed by the same process.

FIG. 16A shows a mask pattern M formed on the blocking portion. Asdescribed in the above exemplary embodiment, the blocking portion 43 dis formed on the transparent member T to prevent light emitted from thelight emitting structures 123 from mixing. Further, in order to form thered light portion 43 a, the green light portion 43 b and the blue lightportion 43 c, the mask pattern M is formed on the blocking portion 43 d.As shown in FIG. 16A, the mask pattern M is formed on the blockingportion 43 d excluding a region of the blocking portion 43 dcorresponding to an upper surface of the light emitting structure 123,on which the red light portion 43 a will be formed, and part of theblocking portion 43 d is etched.

Then, as shown in FIG. 16B, after etching the blocking portion 43 d, aliquid containing red phosphors is deposited over the entire uppersurface of the mask pattern M in order to form the red light portion 43a, followed by curing. The deposited liquid can fill an etched region ofthe blocking portion 43 d.

After completion of curing the red phosphor containing liquid depositedon the mask pattern, the cured liquid is removed together with the maskpattern M from the blocking portion 43 d excluding a region of theblocking portion 43 d subjected to etching. As a result, the red lightportion 43 a can be formed as shown in FIG. 16C.

The green light portion 43 b and the blue light portion 43 c can also beformed by repeating the above processes, thereby forming a displayapparatus as shown in FIG. 16D. As a result, light emitted from thelight emitting structures 123 can be discharged to the outside onlythrough the red light portion 43 a, the green light portion 43 b and theblue light portion 43 c.

In this exemplary embodiment, the transparent member T may be atransparent film or a sapphire substrate, which is the growth substrate21 through which light emitted from each of the light emittingstructures 123 can pass, or the transparent electrode 47 which exhibitsconductivity.

FIGS. 17A, 17B, 17C, 17D, 17E, and 17F show sectional views of a displayapparatus according to a thirteenth exemplary embodiment of the presentdisclosure. FIGS. 17A-17F are sectional views illustrating a process ofmanufacturing the display apparatus according to the thirteenthexemplary embodiment, in which a plurality of light emitting structuresgrown on a growth substrate is coupled to a support substrate afteradjustment of separation distances between the light emitting structuresusing a stretchable sheet SS.

The display apparatus according to the thirteenth exemplary embodimentincludes light emitting structures 123, n-type bumps, p-type bumps, asupport substrate 37, and a wavelength conversion part. Description ofthe same components as those of the above exemplary embodiments will beomitted. The following description will focus on a process of couplinglight emitting structures 123 grown on the growth substrate 21 to thesupport substrate 37 with reference to FIGS. 17A-17F.

The light emitting structure 123 may include a partially exposed regionof the n-type semiconductor layer, which is formed by partially removingthe p-type semiconductor layer and the active layer. An n-type electrodepad may be placed on the exposed region of the n-type semiconductorlayer and a p-type electrode pad may be placed on the p-typesemiconductor layer.

Although the light emitting structure 123 uses a flip-chip type lightemitting diode in this exemplary embodiment, it should be understoodthat a vertical type light emitting diode or a lateral type lightemitting diode may also be used.

The growth substrate 21 may be selected from among any substratesallowing growth of nitride semiconductor layers thereon and may be aninsulation or conductive substrate. By way of example, the growthsubstrate 21 may be a sapphire substrate, a silicon substrate, a siliconcarbide substrate, an aluminum nitride substrate, or a gallium nitridesubstrate. In this exemplary embodiment, the growth substrate 21 may bea sapphire substrate and may include a C-plane as a growth plane onwhich nitride semiconductor layers are grown.

As shown in FIG. 17A, the plurality of light emitting structures 123 isgrown on the growth substrate 21. In this exemplary embodiment, theplural light emitting structures 123 are arranged in a predeterminedpattern on the growth substrate 21 and are separated from each otherduring growth.

With the growth substrate 21 turned upside down, the light emittingstructures 123 grown on the growth substrate 21 are coupled to an uppersurface of the stretchable sheet, as shown in FIG. 17B. In addition,after the plurality of light emitting structures 123 is coupled to thestretchable sheet SS, the growth substrate 21 is removed from the lightemitting structures by LLO and the like, as shown in FIG. 17C.

Thereafter, as shown in FIG. 17D, since the stretchable sheet SS can betwo-dimensionally stretched or compressed, the separation distancesbetween the light emitting structures 123 can be adjusted by stretchingor compressing the stretchable sheet SS. FIG. 17D shows one example inwhich the separation distances between the light emitting structures 123are enlarged by stretching the stretchable sheet SS. In one embodiment,the stretchable sheet SS may be a blue sheet.

In this way, the stretchable sheet SS is turned upside down in astretched state and coupled to a fixing sheet FS via the light emittingstructures 123 such that the light emitting structures 123 are coupledto the fixing sheet. This state is shown in FIG. 17E, and after theplurality of light emitting structures 123 is coupled to the fixingsheet FS, the stretchable sheet SS is removed from the upper surfaces ofthe plurality of light emitting structures 123. In this exemplaryembodiment, since the stretchable sheet SS can be uniformly stretchablein two dimensions, the distances between the plural light emittingstructures 123 can be uniformly widened. The distances between theplural light emitting structures 123 can be adjusted in various ways asneeded. The fixing sheet FS serves to fix the locations of the lightemitting structure 123 in order to maintain the distances between theplural light emitting structures 123 adjusted by the stretchable sheetSS.

After each of the light emitting structures 123 is coupled to the fixingsheet FS, the plurality of light emitting structures 123 is coupled tothe support substrate 37 and the fixing sheet FS is removed from thelight emitting structures, as shown in FIG. 17F. In this exemplaryembodiment, the support substrate 37 includes conductive patterns orinterconnection circuits, and may be a general PCB, a flexiblesubstrate, or a stretchable substrate like the stretchable sheet SS.

As described above, since the separation distances between the plurallight emitting structures 123 may be adjusted using the stretchablesheet SS, the light emitting structures 123 may be simultaneouslytransferred to the support substrate after uniformly increasing thedistances therebetween. Accordingly, the plurality of light emittingstructures 123 used in the display apparatus according to the presentdisclosure may also be used not only in a small wearable apparatus, butalso in a large display.

Although certain exemplary embodiments and implementations have beendescribed herein, other embodiments and modifications will be apparentfrom this description. Accordingly, the inventive concept is not limitedto such embodiments, but rather to the broader scope of the presentedclaims and various obvious modifications and equivalent arrangements.

What is claimed is:
 1. A display apparatus comprising: a panelsubstrate; and a light emitting source disposed on the panel substrate;wherein the light emitting source comprises: a substrate; an electrodedisposed on the substrate; a light emitting structure disposed on theelectrode and having an n-type semiconductor layer, a p-typesemiconductor layer, an n-type electrode, and a p-type electrode; atransparent electrode disposed on the light emitting structure; and anadhesive layer disposed on the light emitting structure, wherein then-type electrode is electrically connected to the electrode, wherein thep-type electrode is electrically connected to the transparent electrode,and wherein the adhesive layer is disposed between the p-type electrodeand the transparent electrode.
 2. The display apparatus of claim 1,wherein at least one side of the electrode is surrounded by anon-conductive region.
 3. The display apparatus of claim 1, whereinlight generated from the light emitting source is configured to beemitted through the transparent electrode.
 4. The display apparatus ofclaim 1, wherein the adhesive layer includes a conductive material. 5.The display apparatus of claim 1, wherein the light emitting sourcecomprises a plurality of light emitters configured to emit light havingdifferent colors.
 6. The display apparatus of claim 1, wherein the panelsubstrate comprises a circuit for an active matrix driving or a passivematrix driving.
 7. A display apparatus comprising: a panel substrate; anelectrode disposed on the panel substrate; a light emitting sourcedisposed on the panel substrate; and a transparent electrode layerdisposed on the light emitting source, wherein the light emitting sourcecomprises a plurality of light emitters, each light emitter including ann-type semiconductor layer, a p-type semiconductor layer, an n-typeelectrode, and a p-type electrode, wherein the n-type electrode iselectrically connected to the electrode, wherein the p-type electrode iselectrically connected to the transparent electrode layer, and whereinthe plurality of light emitters comprises a blue light emitter, a greenlight emitter, and a red light emitter.
 8. The display apparatus ofclaim 7, further comprising a support substrate disposed on thetransparent electrode layer.
 9. The display apparatus of claim 8,wherein the support substrate comprises a transparent material.
 10. Thedisplay apparatus of claim 7, wherein at least one side of the electrodeis surrounded by a non-conductive region.
 11. The display apparatus ofclaim 7, wherein light generated from the light emitting source isconfigured to be emitted through the transparent electrode layer. 12.The display apparatus of claim 7, further comprising an adhesive layerdisposed between the p-type electrode and the transparent electrodelayer.
 13. The display apparatus of claim 12, wherein the adhesive layerincludes a conductive material.
 14. The display apparatus of claim 7,wherein the panel substrate comprises a circuit for an active matrixdriving or a passive matrix driving.
 15. A display apparatus comprising:a panel substrate; an electrode disposed on the panel substrate; a lightemitting source disposed on the panel substrate; a transparent electrodelayer disposed on the light emitting source; and an adhesive layerdisposed on the light emitting source, wherein the light emitting sourcecomprises a plurality of light emitters, each light emitter including ann-type semiconductor layer, a p-type semiconductor layer, an n-typeelectrode, and a p-type electrode, wherein the n-type electrode iselectrically connected to the electrode, wherein the p-type electrode iselectrically connected to the transparent electrode layer, and whereinthe adhesive layer is disposed between the p-type electrode and thetransparent electrode layer.
 16. The display apparatus of claim 15,further comprising a transparent substrate disposed on the transparentelectrode layer.
 17. The display apparatus of claim 15, wherein at leastone side of the electrode is surrounded by a non-conductive region. 18.The display apparatus of claim 16, wherein light generated from thelight emitting source is configured to be emitted through thetransparent substrate.
 19. The display apparatus of claim 15, whereinthe adhesive layer includes a conductive material.
 20. The displayapparatus of claim 15, wherein the panel substrate comprises a circuitfor an active matrix driving or a passive matrix driving.